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IXGT50N90B2D1-ND

Part Number :
IXGT50N90B2D1
Manufacturer :
Intro :
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Stock :
8000 
Unit price :
No price.
Quantity : Enquiry
Current - Collector Pulsed (Icm) 200A
Gate Charge 135nC
IGBT 类型 PT
Switching Energy 4.7mJ(关)
Td (on/off) A 25°C 20ns/350ns
Test Condition -
不同 Vge、Ic 时的 Vce(on) 2.7V @ 15V,50A
供应商器件封装 TO-268
功率 - 最大值 400W
包装 管件
反向恢复时间 (trr) 200ns
安装类型 表面贴装
封装/外壳 TO-268-3,D³Pak(2 引线+接片),TO-268AA
电压 - 集射极击穿(最大值) 900V
电流 - 集电极 (Ic)(最大值) 75A
系列 HiPerFAST™
输入类型 标准
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