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IXST30N60CD1-ND

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IXST30N60CD1
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Current - Collector Pulsed (Icm) 110A
Gate Charge 100nC
IGBT 类型 -
Switching Energy 700µJ(关)
Td (on/off) A 25°C 30ns/90ns
Test Condition -
不同 Vge、Ic 时的 Vce(on) 2.5V @ 15V,30A
供应商器件封装 TO-268
功率 - 最大值 200W
包装 管件
反向恢复时间 (trr) 35ns
安装类型 表面贴装
封装/外壳 TO-268-3,D³Pak(2 引线+接片),TO-268AA
电压 - 集射极击穿(最大值) 600V
电流 - 集电极 (Ic)(最大值) 55A
系列 -
输入类型 标准
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