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IXGT35N120B-ND

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IXGT35N120B
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Current - Collector Pulsed (Icm) 140A
Gate Charge 170nC
IGBT 类型 PT
Switching Energy 3.8mJ(关)
Td (on/off) A 25°C 50ns/180ns
Test Condition -
不同 Vge、Ic 时的 Vce(on) 3.3V @ 15V,35A
供应商器件封装 TO-268
功率 - 最大值 300W
包装 管件
反向恢复时间 (trr) -
安装类型 表面贴装
封装/外壳 TO-268-3,D³Pak(2 引线+接片),TO-268AA
电压 - 集射极击穿(最大值) 1200V
电流 - 集电极 (Ic)(最大值) 70A
系列 HiPerFAST™
输入类型 标准
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