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IXGB75N60BD1-ND

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IXGB75N60BD1
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Current - Collector Pulsed (Icm) 300A
Gate Charge 248nC
IGBT 类型 -
Switching Energy 3.3mJ(关)
Td (on/off) A 25°C 62ns/220ns
Test Condition -
不同 Vge、Ic 时的 Vce(on) 2.3V @ 15V,75A
供应商器件封装 *
功率 - 最大值 360W
包装 管件
反向恢复时间 (trr) 35ns
安装类型 通孔
封装/外壳 TO-264-3,TO-264AA
电压 - 集射极击穿(最大值) 600V
电流 - 集电极 (Ic)(最大值) 120A
系列 HiPerFAST™
输入类型 标准
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