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HGTD3N60C3S9A-ND

Part Number :
HGTD3N60C3S9A
Manufacturer :
Intro :
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PDF :
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Stock :
8000 
Unit price :
No price.
Quantity : Enquiry
Current - Collector Pulsed (Icm) 24A
Gate Charge 10.8nC
IGBT 类型 -
Switching Energy 85µJ (开), 245µJ (关)
Td (on/off) A 25°C 5ns/325ns
Test Condition -
不同 Vge、Ic 时的 Vce(on) 2V @ 15V,3A
供应商器件封装 TO-252AA
功率 - 最大值 33W
包装 带卷 (TR)
反向恢复时间 (trr) -
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
电压 - 集射极击穿(最大值) 600V
电流 - 集电极 (Ic)(最大值) 6A
系列 -
输入类型 标准
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