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HGTP5N120BND-ND

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HGTP5N120BND
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Current - Collector Pulsed (Icm) 40A
Gate Charge 53nC
IGBT 类型 NPT
Switching Energy 450µJ (开), 390µJ (关)
Td (on/off) A 25°C 22ns/160ns
Test Condition 960V, 5A, 25 欧姆, 15V
不同 Vge、Ic 时的 Vce(on) 2.7V @ 15V,5A
供应商器件封装 TO-220AB
功率 - 最大值 167W
包装 管件
反向恢复时间 (trr) 30ns
安装类型 通孔
封装/外壳 TO-220-3
电压 - 集射极击穿(最大值) 1200V
电流 - 集电极 (Ic)(最大值) 21A
系列 -
输入类型 标准
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