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HGT1S10N120BNSFS-ND

Part Number :
HGT1S10N120BNS
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Intro :
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PDF :
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Stock :
1200 
Unit price :
No price.
Quantity : Enquiry
Current - Collector Pulsed (Icm) 80A
Gate Charge 100nC
IGBT 类型 NPT
Switching Energy 0.32mJ (开), 0.80mJ (关)
Td (on/off) A 25°C 23ns/165ns
Test Condition 960V, 10A, 10 欧姆, 15V
不同 Vge、Ic 时的 Vce(on) 2.7V @ 15V,10A
供应商器件封装 TO-263AB
功率 - 最大值 298W
包装 管件
反向恢复时间 (trr) -
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
电压 - 集射极击穿(最大值) 1200V
电流 - 集电极 (Ic)(最大值) 35A
系列 -
输入类型 标准
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